Nucleation of threading dislocations in sublimation grown silicon carbide

被引:56
作者
Sanchez, EK
Liu, JQ
De Graef, M
Skowronski, M
Vetter, WM
Dudley, M
机构
[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
[2] SUNY Stony Brook, Dept Mat Sci & Engn, Stony Brook, NY 11794 USA
关键词
D O I
10.1063/1.1428088
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural defects in sublimation-grown silicon carbide layers have been investigated by transmission electron microscopy, atomic force microscopy, x-ray topography, and KOH etching. Nucleation of two-dimensional islands on damage free surfaces of high quality Lely seeds led to formation of stacking faults at the initial stages of growth. The location and number of stacking faults correlates with threading dislocation density. Also, the growth rate is shown to have a pronounced effect on the threading dislocation densities. Elementary screw dislocation density has been observed to increase from 20 cm(-2) to 4x10(3) cm(-2) for growth rates increasing from 0.02 to 1.5 mm/h. Growth on seeds miscut 5degrees off the c axis resulted in screw dislocation densities almost two orders of magnitude lower than on axis growth. The results are interpreted as due to SiC stacking disorder at the initial stages of growth. (C) 2002 American Institute of Physics.
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页码:1143 / 1148
页数:6
相关论文
共 23 条
[1]  
Balakrishna V, 1998, INST PHYS CONF SER, V160, P321
[2]   SIC BOULE GROWTH BY SUBLIMATION VAPOR TRANSPORT [J].
BARRETT, DL ;
SEIDENSTICKER, RG ;
GAIDA, W ;
HOPKINS, RH ;
CHOYKE, WJ .
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :17-23
[3]  
BERTKE R, IN PRESS J ELECTROCH
[4]   Characterization of SiC using synchrotron white beam X-ray topography [J].
Dudley, M ;
Huang, XR .
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :431-436
[5]   The mechanism of micropipe nucleation at inclusions in silicon carbide [J].
Dudley, M ;
Huang, XR ;
Huang, W ;
Powell, A ;
Wang, S ;
Neudeck, P ;
Skowronski, M .
APPLIED PHYSICS LETTERS, 1999, 75 (06) :784-786
[6]   THE INFLUENCE OF DISLOCATIONS ON CRYSTAL GROWTH [J].
FRANK, FC .
DISCUSSIONS OF THE FARADAY SOCIETY, 1949, (05) :48-54
[7]   An atomic force microscopy study of super-dislocation/micropipe complexes on the 6H-SiC(0001) growth surface [J].
Giocondi, J ;
Rohrer, GS ;
Skowronski, M ;
Balakrishna, V ;
Augustine, G ;
Hobgood, HM ;
Hopkins, RH .
JOURNAL OF CRYSTAL GROWTH, 1997, 181 (04) :351-362
[8]   Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport [J].
Ha, S ;
Nuhfer, NT ;
Rohrer, GS ;
De Graef, M ;
Skowronski, M .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (07) :L5-L8
[9]   Plastic deformation and residual stresses in SiC boules grown by PVT [J].
Ha, S ;
Rohrer, GS ;
Skowronski, M ;
Heydemann, VD ;
Snyder, DW .
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :67-70
[10]  
HA SS, UNPUB