Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature

被引:67
作者
Ryu, HY [1 ]
Lee, YH
Sellin, RL
Bimberg, D
机构
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
关键词
D O I
10.1063/1.1420405
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly efficient extraction of photoluminescence is observed from two-dimensional photonic crystal slabs employing InGaAs quantum dots as active material. The introduction of quantum dots reduces diffusion of carriers and thereby suppresses the surface recombination at the air-hole sidewalls of the photonic crystal. Around the normalized frequency of 0.7, over thirty-fold enhancement of the photoluminescence extraction is achieved at 78 K, indicating strong coupling to leaky modes of the free-standing photonic crystal slab. In addition, when the photoluminescence spectra overlaps with a photonic band gap, enhanced light extraction originating from the photonic band gap is observed experimentally. (C) 2001 American Institute of Physics.
引用
收藏
页码:3573 / 3575
页数:3
相关论文
共 17 条
[11]   Design parameters for lateral carrier confinement in quantum-dot lasers [J].
Kim, JK ;
Strand, TA ;
Naone, RL ;
Coldren, LA .
APPLIED PHYSICS LETTERS, 1999, 74 (19) :2752-2754
[12]   Two-dimensional photonic band-gap defect mode laser [J].
Painter, O ;
Lee, RK ;
Scherer, A ;
Yariv, A ;
O'Brien, JD ;
Dapkus, PD ;
Kim, I .
SCIENCE, 1999, 284 (5421) :1819-1821
[13]   Photonic crystal microcavities with self-assembled InAs quantum dots as active emitters [J].
Reese, C ;
Becher, C ;
Imamoglu, A ;
Hu, E ;
Gerardot, BD ;
Petroff, PM .
APPLIED PHYSICS LETTERS, 2001, 78 (16) :2279-2281
[14]   Effect of nonradiative recombination on light emitting properties of two-dimensional photonic crystal slab structures [J].
Ryu, HY ;
Hwang, JK ;
Song, DS ;
Han, IY ;
Lee, YH ;
Jang, DH .
APPLIED PHYSICS LETTERS, 2001, 78 (09) :1174-1176
[15]   Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers [J].
Sellin, RL ;
Ribbat, C ;
Grundmann, M ;
Ledentsov, NN ;
Bimberg, D .
APPLIED PHYSICS LETTERS, 2001, 78 (09) :1207-1209
[16]   Surface plasmon enhanced light-emitting diode [J].
Vuckovic, J ;
Loncar, M ;
Scherer, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (10) :1131-1144
[17]   Optical characterization of two-dimensional photonic crystal cavities with indium arsenide quantum dot emitters [J].
Yoshie, T ;
Scherer, A ;
Chen, H ;
Huffaker, D ;
Deppe, D .
APPLIED PHYSICS LETTERS, 2001, 79 (01) :114-116