Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

被引：191

作者：

Sellin, RL ^{[1
]}

Ribbat, C ^{[1
]}

Grundmann, M ^{[1
]}

Ledentsov, NN ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1350596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum-dot lasers are achieved by the application of an annealing and growth interruption step at 600 degreesC after the deposition of the dots. The transparency current is reduced to below 20 A/cm(2) at room temperature. The internal differential quantum efficiency is increased from below 50% to above 90% by improvement of the barrier material and subsequent reduction of leakage current. A peak power of 3.7 W at 1140 nm lasing wavelength in pulsed operation at room temperature is demonstrated. (C) 2001 American Institute of Physics.

引用

页码：1207 / 1209

页数：3

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