Emission properties of high-Q silicon nitride photonic crystal heterostructure cavities

被引：44

作者：

Barth, Michael ^{[1
]}

Nuesse, Nils ^{[2
]}

Stingl, Johannes ^{[1
]}

Loechel, Bernd ^{[2
]}

Benson, Oliver ^{[1
]}

机构：

[1] Humboldt Univ, Inst Phys, D-10117 Berlin, Germany

[2] BESSY, Applicat Ctr Microengn, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2958346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and optical characterization of photonic crystal (PC) double-heterostructure cavities made from silicon nitride (SiN). The intrinsic luminescence of the SiN membranes was used as an internal light source in the visible wavelength range (600-700 nm) to study the quality factor and polarization properties of the cavity modes. Quality factors of up to 3400 were found experimentally, which represents the highest value reported so far in low-index PCs. These results highlight the role of SiN as a promising material system for PC devices in the visible. (C) 2008 American Institute of Physics.

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