AIN air-bridge photonic crystal nanocavities demonstrating high quality factor

被引：58

作者：

Arita, M.

Ishida, S.

Kako, S.

Iwamoto, S.

Arakawa, Y.

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.2757596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report an achievement of high quality AlN ultraviolet photonic crystal nanocavities. Convex AlN air-bridge structures with embedded GaN quantum dots have been formed by utilizing photoelectrochemical etching of 6H-SiC substrates. Room-temperature microscopic photoluminescence measurements reveal the high quality of the nanocavities. For the lowest-order cavity mode of a 150-nm-period nanocavity with seven missing holes, the highest Q factor (> 2400) ever reported in nitride-based photonic crystals has been obtained. (c) 2007 American Institute of Physics.

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页数：3

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