Exciton and biexciton luminescence from single hexagonal GaN/AlN self-assembled quantum dots

被引：77

作者：

Kako, S ^{[1
]}

Hoshino, K ^{[1
]}

Iwamoto, S ^{[1
]}

Ishida, S ^{[1
]}

Arakawa, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 01期

关键词：

D O I：

10.1063/1.1769586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report single dot spectroscopy of hexagonal GaN/AlN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Through the reduction of the number of quantum dots using submicron mesa structures, we have obtained several isolated photoluminescence peaks emitted by individual quantum dots. With increasing excitation power, an additional peak emerges in the higher-energy side of an excitonic ground state. This additional peak shows quadratic power dependence, and is attributed to the photoluminescence from a biexciton state. The biexciton binding energy is negative and the magnitude is about 30 meV, which is explained by the effects of a strong built-in electric field. (C) 2004 American Institute of Physics.

引用

页码：64 / 66

页数：3

共 26 条

[1] Theory of the electronic structure of GaN/AIN hexagonal quantum dots [J].

Andreev, AD ;

O'Reilly, EP .

PHYSICAL REVIEW B, 2000, 62 (23) :15851-15870

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3] Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots -: art. no. 041308 [J].

Bayer, M ;

Forchel, A .

PHYSICAL REVIEW B, 2002, 65 (04) :1-4

[4]

BESOMES L, 2002, PHYS REV B, V66, P41306

[5]

Bimberg D., 1999, QUANTUM DOT HETEROST

[6] Biexciton quantum coherence in a single quantum dot [J].

Chen, G ;

Stievater, TH ;

Batteh, ET ;

Li, XQ ;

Steel, DG ;

Gammon, D ;

Katzer, DS ;

Park, D ;

Sham, LJ .

PHYSICAL REVIEW LETTERS, 2002, 88 (11) :4-117901

[7] Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots -: art. no. 073307 [J].

Finley, JJ ;

Ashmore, AD ;

Lemaître, A ;

Mowbray, DJ ;

Skolnick, MS ;

Itskevich, IE ;

Maksym, PA ;

Hopkinson, M ;

Krauss, TF .

PHYSICAL REVIEW B, 2001, 63 (07)

[8] Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots [J].

Kako, S ;

Miyamura, M ;

Tachibana, K ;

Hoshino, K ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :984-986

[9] Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer [J].

Kawakami, Y ;

Peng, AG ;

Narukawa, Y ;

Fujita, S ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1414-1416

[10] Homogeneous linewidth broadening in a In0.5Ga0.5As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope -: art. no. 121304 [J].

Matsuda, K ;

Ikeda, K ;

Saiki, T ;

Tsuchiya, H ;

Saito, H ;

Nishi, K .

PHYSICAL REVIEW B, 2001, 63 (12)

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