Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

被引:81
作者
Buckle, PD
Dawson, P
Hall, SA
Chen, X
Steer, MJ
Mowbray, DJ
Skolnick, MS
Hopkinson, M
机构
[1] Univ Manchester, Inst Sci & Technol, Dept Phys, Manchester M60 1QD, Lancs, England
[2] Univ Sheffield, Dept Phys, Sheffield S3 7RH, S Yorkshire, England
[3] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Cent Facil 3 5 Semicond, Sheffield S1 3JD, S Yorkshire, England
关键词
D O I
10.1063/1.371092
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article we report the results of time integrated and time resolved photoluminescence spectroscopy and photoluminescence time decay measurements as a function of excitation density at 6 K on high quality self-organized InAs/GaAs quantum dots. To understand the form of the experimentally observed photoluminescence transients a Monte Carlo model has been developed that allows for the effects of random capture of photo-excited carriers. By comparison with the results of our model we are able to ascribe the excitation density dependence of the overall form of the decay of the emission from the quantum dot ground states and the biexponential nature of the decay of the first excited state emission as being due to the combined effects of radiative recombination, density dependent carrier scattering, and the restriction of carrier scattering due to state blocking caused by the effects of Pauli exclusion. To successfully model the form of the biexponential decay of the highest energy excited states we have to invoke the nonsequential scattering of carriers between the quantum dot states. (C) 1999 American Institute of Physics. [S0021-8979(99)08817-9].
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页码:2555 / 2561
页数:7
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