Formation and evolution of self-organized hexagonal patterns on silicon surface by laser irradiation in water

被引：17

作者：

Chen, X. Y. ^{[1
,2
,3
]}

Lin, J. ^{[1
,2
,3
]}

Liu, J. M. ^{[2
,3
]}

Liu, Z. G. ^{[1
,2
,3
]}

机构：

[1] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 94卷 / 03期

基金：

中国国家自然科学基金;

关键词：

PRESSURE GENERATION; RAPID VAPORIZATION; LIQUID; FEMTOSECOND; NANOSTRUCTURES; EJECTION; FILMS; TRANSITIONS; INSTABILITY; NUCLEATION;

D O I：

10.1007/s00339-008-4894-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It was found that laser irradiation of silicon immersed in water can lead to regular hexagonal patterns on the silicon surface with period of similar to 10 mu m within several tens of minutes. The formation and the evolution of the surface patterns can be interpreted as Rayleigh-Taylor instability of the melted silicon layer under the interfacial pressure formed by fast boiling of the interfacial water at the laser-heated silicon surface. Based on the mechanism, a liquid film equation was proposed. The time evolution of the patterns was then compared with that of the well-defined classical Rayleigh-Taylor instability system. It showed that the two systems were qualitatively consistent in several aspects, supporting the Rayleigh-Taylor instability mechanism proposed.

引用

页码：649 / 656

页数：8

共 59 条

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