Correlation between the optoelectronic properties and the structure of hydrogenated amorphous silicon-carbon films grown from a C2H2 gas source

被引：7

作者：

Giorgis, F ^{[1
]}

Pirri, CF ^{[1
]}

Tresso, E ^{[1
]}

Rava, P ^{[1
]}

机构：

[1] ELETTRORAVA SPA, TURIN, ITALY

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1997年 / 75卷 / 04期

关键词：

D O I：

10.1080/13642819708202332

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated amorphous silicon-carbon alloys (aSi(1-x)C(x):H) with an optical gap in the range 2.0-2.45 eV have been grown by plasma-enhanced chemical vapour deposition from C2H2 + SiH4 gas mixtures employing low-purity (99.95%) sources. By changing the acetylene percentage in the plasma from 0.8% to 20% the relative carbon content [C]/[C + Si] in the films was varied between 0.09 and 0.35, as deduced from Rutherford back scattering. Optical, electrical and defect data have been obtained. We have shown that the physical properties of C2H2 based films, without any deposition condition optimization, are comparable with high-electronic-quality CH4-based samples at the same optical gap. The network structure of C2H2 based films differs from CH4 based films, as revealed by infrared spectroscopy.

引用

页码：471 / 483

页数：13

共 24 条

[21] SELECTIVE LOW-POWER PLASMA DECOMPOSITION OF SILANE-METHANE MIXTURES FOR THE PREPARATION OF METHYLATED AMORPHOUS-SILICON [J].

SOLOMON, I ;

SCHMIDT, MP ;

TRANQUOC, H .

PHYSICAL REVIEW B, 1988, 38 (14) :9895-9901

[22]

Street R.a., 1991, Hydrogenated amorphous silicon

[23]

TAWADA Y, 1982, J APPL PHYS, V53, P5233

[24] VIBRATIONAL-SPECTRUM OF HYDROGENATED AMORPHOUS SI-C FILMS [J].

WIEDER, H ;

CARDONA, M ;

GUARNIERI, CR .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (01) :99-112

← 1 2 3 →