Electrochemical deposition of indium sulfide thin films using two-step pulse biasing

被引：29

作者：

Haleem, A. M. Abdel ^{[1
]}

Ichimura, M. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 21期

关键词：

indium sulfide; thin films; electrochemical deposition; cd-free buffer layer;

D O I：

10.1016/j.tsf.2008.03.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In-2 (SO4)(3) and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：7783 / 7789

页数：7

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