Chemical bath deposition of indium sulphide thin films: preparation and characterization

被引：163

作者：

Lokhande, CD ^{[1
]}

Ennaoui, A ^{[1
]}

Patil, PS ^{[1
]}

Giersig, M ^{[1
]}

Diesner, K ^{[1
]}

Muller, M ^{[1
]}

Tributsch, H ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Bereich Phys Chem, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 1999年 / 340卷 / 1-2期

关键词：

deposition process; optical properties; structural properties; sulphides;

D O I：

10.1016/S0040-6090(98)00980-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium sulphide (In2S3) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In2S3 thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction. TEM. EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline (is an element of phase). The optical band gap of In2S3 thin him was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：18 / 23

页数：6

共 28 条

[1] An 11.4% efficient polycrystalline thin film solar cell based on CuInS2 with a Cd-free buffer layer [J].

Braunger, D ;

Hariskos, D ;

Walter, T ;

Schock, HW .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 40 (02) :97-102

[2]

*CHEM SOC LOND, 1964, CHEM SOC SPEC PUBL, V17

[3] VAPOR GROWTH OF 3 IN2S3 MODIFICATIONS BY IODINE TRANSPORT [J].

DIEHL, R ;

NITSCHE, R .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (03) :306-310

[4]

ENNAOUI A, 1997, 14 EUR PHOT SOL EN C

[5] HIGH-EFFICIENCY CUINXGA1-XSE2 SOLAR-CELLS MADE FROM (INX,GA1-X)2SE3 PRECURSOR FILMS [J].

GABOR, AM ;

TUTTLE, JR ;

ALBIN, DS ;

CONTRERAS, MA ;

NOUFI, R ;

HERMANN, AM .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :198-200

[6]

GOSWAMI A, 1976, INDIAN J PURE AP PHY, V14, P716

[7] A novel cadmium free buffer layer for Cu(In,Ga)Se-2 based solar cells [J].

Hariskos, D ;

Ruckh, M ;

Ruhle, U ;

Walter, T ;

Schock, HW ;

Hedstrom, J ;

Stolt, L .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 41-2 :345-353

[8]

Hariskos D, 1995, 13 EUR PHOT SOL EN C

[9] NORMAL-TYPE IN2S3 THIN-FILMS PREPARED BY GAS CHALCOGENIZATION OF METALLIC ELECTROPLATED INDIUM - PHOTOELECTROCHEMICAL CHARACTERIZATION [J].

HERRERO, J ;

ORTEGA, J .

SOLAR ENERGY MATERIALS, 1988, 17 (05) :357-368

[10]

HERRERO J, 1997, 14 EUR PHOT SOL EN C

← 1 2 3 →