Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light-Emitting-Diode Display Panel

被引：312

作者：

Park, Sang-Hee K. ^{[2
]}

Hwang, Chi-Sun ^{[2
]}

Ryu, Minki ^{[2
]}

Yang, Shinhyuk ^{[2
]}

Byun, Chunwon ^{[2
]}

Shin, Joeheon ^{[2
]}

Lee, Jeong-Ik ^{[2
]}

Lee, Kimoon ^{[1
]}

Oh, Min Suk ^{[1
]}

Im, Seongil ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 06期

关键词：

LAYER;

D O I：

10.1002/adma.200801470

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Transparent ZnO thin-film transistors (TFTs) with a defect-controlled channel and channel/dielectric interface maintain good photo-stability during device operation. The figure shows a cross-sectional view of a top-gate ZnO-based transparent TFT/storage capacitor cell structure, connected to front-panel organic-light-emitting-diode pixels to operate in bottom emission mode.

引用

页码：678 / +

页数：6

共 27 条

[1] Ultraviolet detecting properties of ZnO-based thin film transistors [J].

Bae, HS ;

Im, S .

THIN SOLID FILMS, 2004, 469 :75-79

[2] Photodetecting properties of ZnO-based thin-film transistors [J].

Bae, HS ;

Yoon, MH ;

Kim, JH ;

Im, S .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5313-5315

[3] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[4] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[5] First-principles study of the structure and stability of oxygen defects in zinc oxide [J].

Erhart, P ;

Klein, A ;

Albe, K .

PHYSICAL REVIEW B, 2005, 72 (08)

[6] First-principles study of intrinsic point defects in ZnO: Role of band structure, volume relaxation, and finite-size effects [J].

Erhart, Paul ;

Albe, Karsten ;

Klein, Andreas .

PHYSICAL REVIEW B, 2006, 73 (20)

[7] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[8] Crystallization of amorphous indium zinc oxide thin films produced by radio-frequency magnetron sputtering [J].

Goncalves, G. ;

Barquinha, P. ;

Raniero, L. ;

Martins, R. ;

Fortunato, E. .

THIN SOLID FILMS, 2008, 516 (07) :1374-1376

[9] Towards see-through displays:: Fully transparent thin-film transistors driving transparent organic light-emitting diodes [J].

Görrn, P ;

Sander, M ;

Meyer, J ;

Kröger, M ;

Becker, E ;

Johannes, HH ;

Kowalsky, W ;

Riedl, T .

ADVANCED MATERIALS, 2006, 18 (06) :738-+

[10] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

← 1 2 3 →