16GHz bandwidth MSM photodetector and 45/85GHz f(T)/f(max) HEMT prepared on an identical InGaAs/InP layer structure

An MSM photodetector and a HEMT prepared on an identical InGaAs/InP laver structure are demonstrated for the first time. A 150nm undoped InGaAs layer is inserted above the 2DEG to enhance the photodetector responsivity, and a bandwidth of 16GHz is achieved. On the same wafer. processed HEMTs show optimal high frequency performance with an f(T) of 45GHz and an f(max) of 85GHz. This procedure could be suitable for the preparation of monolithically integrated photoreceivers with high performance and low cost.