Evolution of short- and long-range order during Si incorporation on GaAs(001) observed by RAS and RHEED during MBE

被引：9

作者：

Daweritz, L ^{[1
]}

Stahrenberg, K ^{[1
]}

Schutzendube, P ^{[1
]}

Zettler, JT ^{[1
]}

Richter, W ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

molecular beam epitaxy; gallium arsenide; Si-doping; Si-on-GaAs; kinetics of interface formation; surface reconstruction; reflectance anisotropy spectroscopy; reflection high-energy electron diffraction;

D O I：

10.1016/S0022-0248(96)00854-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Si incorporation on GaAs (0 0 1) has been studied in real time by reflection high-energy electron diffraction (RHEED) and reflectance anisotropy spectroscopy (RAS) at conditions of enhanced adatom mobility. In the RAS spectra, besides resonances due to As and Ga dimers on the GaAs surface also features due to Si dimers in single and double lavers as well as As dimers adsorbed on them are identified. The incorporation process is very complex due to Si-induced As desorption, combined incorporation of Si and As, and readsorption of As on (Si, Ga). At conditions of high adatom mobility (low As-4 pressure) a single Si layer is nearly completed before Si incorporation in a second layer takes placet whereas for reduced adatom mobility (high As-4 pressure) islanding with Si incorporation in a double layer is found in early growth stages.

引用

页码：310 / 316

页数：7

共 18 条

[1] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332

[2] OBSERVATION AND ANALYSIS OF EPITAXIAL-GROWTH WITH REFLECTANCE-DIFFERENCE SPECTROSCOPY [J].

ASPNES, DE .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 30 (2-3) :109-119

[3] Mechanism for disorder on GaAs(001)-(2x4) surfaces [J].

Avery, AR ;

Goringe, CM ;

Holmes, DM ;

Sudijono, JL ;

Jones, TS .

PHYSICAL REVIEW LETTERS, 1996, 76 (18) :3344-3347

[4] THE LOCATION OF SILICON ATOMS AND THE INITIAL-STAGES OF FORMATION OF THE SI/GAAS(001) INTERFACE STUDIED BY STM [J].

AVERY, AR ;

SUDIJONO, JL ;

JONES, TS ;

JOYCE, BA .

SURFACE SCIENCE, 1995, 340 (1-2) :57-70

[5] A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING [J].

AVERY, AR ;

HOLMES, DM ;

SUDIJONO, JL ;

JONES, TS ;

FAHY, MR ;

JOYCE, BA .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :202-208

[6] NUCLEATION, RELAXATION AND REDISTRIBUTION OF SI LAYERS IN GAAS [J].

BRANDT, O ;

CROOK, G ;

PLOOG, K ;

BIERWOLF, R ;

HOHENSTEIN, M ;

MAIER, M ;

WAGNER, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B) :L24-L27

[7] SURFACE DIELECTRIC FUNCTIONS OF (2X1) AND (1X2) RECONSTRUCTIONS OF (001) GAAS-SURFACES [J].

CHANG, YC ;

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :896-899

[8] Tailoring of Si doping layers in GaAs during molecular beam epitaxy [J].

Daweritz, L ;

Kostial, H ;

Ramsteiner, M ;

Klann, R ;

Schutzendube, P ;

Stahrenberg, K ;

Behrend, J ;

Hey, R ;

Maier, M ;

Ploog, K .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1996, 194 (01) :127-144

[9] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF THE GAASSIGAAS SYSTEM [J].

FAHY, MR ;

ASHWIN, MJ ;

HARRIS, JJ ;

NEWMAN, RC ;

JOYCE, BA .

APPLIED PHYSICS LETTERS, 1992, 61 (15) :1805-1807

[10]

HEUN S, 1993, PHYS REV B, V53, P13534

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