SURFACE DIELECTRIC FUNCTIONS OF (2X1) AND (1X2) RECONSTRUCTIONS OF (001) GAAS-SURFACES

被引：23

作者：

CHANG, YC

ASPNES, DE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：896 / 899

页数：4

共 17 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] DIRECT OPTICAL MEASUREMENT OF SURFACE DIELECTRIC RESPONSES - INTERRUPTED GROWTH ON (001) GAAS [J].

ASPNES, DE ;

CHANG, YC ;

STUDNA, AA ;

FLOREZ, LT ;

FARRELL, HH ;

HARBISON, JP .

PHYSICAL REVIEW LETTERS, 1990, 64 (02) :192-195

[3] ABOVE-BANDGAP OPTICAL ANISOTROPIES IN CUBIC SEMICONDUCTORS - A VISIBLE NEAR ULTRAVIOLET PROBE OF SURFACES [J].

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1498-1506

[4] ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837

[5] THEORY OF DIELECTRIC-FUNCTION ANISOTROPIES OF (001) GAAS (2X1) SURFACES [J].

CHANG, YC ;

ASPNES, DE .

PHYSICAL REVIEW B, 1990, 41 (17) :12002-12012

[6]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[7] MACROSCOPIC DIELECTRIC TENSOR AT CRYSTAL-SURFACES [J].

DELSOLE, R ;

FIORINO, E .

PHYSICAL REVIEW B, 1984, 29 (08) :4631-4645

[8] MOLECULAR-BEAM EPITAXY GROWTH MECHANISMS ON GAAS(100) SURFACES [J].

FARRELL, HH ;

HARBISON, JP ;

PETERSON, LD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1482-1489

[9]

LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222

[10] INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE [J].

LAUTENSCHLAGER, P ;

GARRIGA, M ;

LOGOTHETIDIS, S ;

CARDONA, M .

PHYSICAL REVIEW B, 1987, 35 (17) :9174-9189

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