Growth of praseodymium oxide and praseodymium silicate thin films by liquid injection MOCVD

被引：22

作者：

Aspinall, HC

Gaskell, J

Williams, PA

Jones, AC ^{[1
]}

Chalker, PR

Marshall, PA

Smith, LM

Critchlow, GW

机构：

[1] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England

[2] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England

[3] Epichem Oxides & Nitrides, Wirral CH62 3QF, Merseyside, England

[4] Univ Loughborough, Inst Surface Sci & Technol, Loughborough LE11 3TU, Leics, England

来源：

CHEMICAL VAPOR DEPOSITION | 2004年 / 10卷 / 02期

关键词：

alkoxide ligand; liquid injection MOCVD; praseodymium oxide; praseodymium silicate; silylamide ligand;

D O I：

10.1002/cvde.200306282

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin films of praseodymium oxide have been deposited by liquid injection MOCVD using the volatile praseodymium alkoxide, [Pr(mmp)(3)] (mmp = 1-methoxy-2-methyl-2-propanolate, OCMe2CH2OMe). The films were grown over a wide range of substrate temperatures (250-600 degreesC) and were found to consist predominantly of the Pr6O11 phase. Praseodymium silicate films containing similar to16-22 at.-% Si were deposited over the temperature range 350-550 degreesC using [Pr{N(SiMe3)(2)}(3)] in the absence of any additional Si source.

引用

页码：83 / 89

页数：7

共 26 条

[1] Volatile donor-functionalized alkoxy derivatives of lutetium and their structural characterization [J].