Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator

被引：135

作者：

Herlogsson, Lars ^{[1
]}

Noh, Yong-Young ^{[2
,3
]}

Zhao, Ni ^{[2
]}

Crispin, Xavier ^{[1
]}

Sirringhaus, Henning

Berggren, Magnus ^{[1
]}

机构：

[1] Linkopings Univ, Dept Sci & Technol, SE-601174 Norrkoping, Sweden

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] Elect & Telecommun Res Inst, Convergence Components & Mat Lab, Taejon 305305, South Korea

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 24期

关键词：

D O I：

10.1002/adma.200801756

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub--micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that: effectively suppresses short-channel effects at low applied gate voltages.

引用

页码：4708 / +

页数：7

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