Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures

被引：6

作者：

Marcinkevicius, S

Hillmer, H

Losch, R

Olin, U

机构：

[1] DEUTSCH TELEKOM,TECHNOL ZENTRUM,D-64276 DARMSTADT,GERMANY

[2] INST OPT RES,S-10044 STOCKHOLM,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 08期

关键词：

D O I：

10.1063/1.117071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental investigations of carrier transport and capture into quantum wells are performed for InAlGaAs/InP laser structures. Time-resolved photoluminescence measurements are made by upconversion technique. The characteristic times for the ambipolar carrier transport in the confinement region and the electron capture into the quantum wells are about 2-5 and 1 ps, respectively. The obtained results show a good potential for high-speed InAlGaAs/InP quantum well lasers operating in the 1.5 mu m spectral region. (C) 1996 American Institute of Physics.

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收藏

页码：1101 / 1103

页数：3

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