Fabrication and characteristics of C84 fullerene field-effect transistors

被引：45

作者：

Shibata, K ^{[1
]}

Kubozono, Y

Kanbara, T

Hosokawa, T

Fujiwara, A

Ito, Y

Shinohara, H

机构：

[1] Okayama Univ, Dept Chem, Okayama 7008530, Japan

[2] Japan Sci & Technol Corp, CREST, Kawaguchi 3220012, Japan

[3] Japan Inst Sci & Technol, Tatsunokuchi, Ishikawa 9231292, Japan

[4] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期

关键词：

D O I：

10.1063/1.1695193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fullerene field-effect transistors (FETs) were fabricated with thin films of C-84, which showed n-channel normally-on depletion-type FET characteristics. The C-84 FET device exhibited the highest mobility, mu, of 2.1x10(-3) cm(2) V-1 s(-1) among normally-on fullerene FETs. The carrier transport of this FET device can be interpreted as thermally activated hopping transport. Carrier type (n-channel) and transport mechanism (hopping) reflect the electronic properties of the C-84 molecule. (C) 2004 American Institute of Physics.

引用

页码：2572 / 2574

页数：3

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