Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide

被引：34

作者：

Choi, Kisik ^{[1
]}

Wen, Huang-Chun ^{[1
]}

Bersuker, Gennadi ^{[1
]}

Harris, Rusty ^{[1
]}

Lee, Byoung Hun ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

关键词：

D O I：

10.1063/1.2993335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of flatband voltage roll-off (FVRO) has been investigated with capacitors fabricated on terraced oxide with various thicknesses of Al(2)O(3) film deposited by atomic layer deposition. It is found that the FVRO is mainly controlled by the thickness of the bottom interfacial layer and is independent of Al(2)O(3) thickness. This indicates that the dipole at the SiO(2)/Al(2)O(3) interface is mainly responsible for the FVRO phenomenon rather than the charges. Electrostatic analysis suggests that the disruption of the interface dipole by oxygen vacancy generated in thinner bottom interfacial layer is a potential cause of the FVRO. (C) 2008 American Institute of Physics.

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