High-speed solution-processed organic single crystal transistors using a novel triisopropylsilylethynyl anthracene derivative

被引:10
作者
Chung, Dae Sung [1 ]
An, Tae Kyu [2 ]
Park, Chan Eon [2 ]
Yun, Hui-Jun [3 ,4 ]
Kwon, Soon-Ki [3 ,4 ]
Kim, Yun-Hi [5 ,6 ]
机构
[1] Dong A Univ, Dept Chem Engn, Pusan 604714, South Korea
[2] Pohang Univ Sci & Technol, Polymer Res Inst, Postech Organ Elect Lab, Dept Chem Engn, Pohang 790784, South Korea
[3] Gyeongsang Natl Univ, Sch Mat Sci, Jinju 660701, South Korea
[4] Gyeongsang Natl Univ, ERI, Jinju 660701, South Korea
[5] Gyeongsang Natl Univ, Dept Chem, Jinju 660701, South Korea
[6] Gyeongsang Natl Univ, RINS, Jinju 660701, South Korea
关键词
high-frequency effects; organic semiconductors; thin film transistors; transistors; visible spectra; FIELD-EFFECT TRANSISTORS; PERFORMANCE; PHOTODETECTORS; DIELECTRICS; TRANSPORT; MOBILITY;
D O I
10.1063/1.4764062
中图分类号
O59 [应用物理学];
学科分类号
摘要
A high-quality organic single crystal transistor (OSCT) was fabricated via solution-processing using a novel anthracene derivative (TIPsAntNE). The OSCT fabricated on a surface-modified high-capacitance ZrOx substrate provided a transistor that operated at low voltages with a high mobility up to 4.1 cm(2)/Vs and negligible hysteresis (a V-th shift of <20mV). Importantly, the TIPsAntNE OSCT functioned under a high-frequency AC signal with a gate bias as high as 30 kHz. These are crucial operational requirements for commercial applications of organic transistors. The photoresponsivity (>1 A/W) of the TIPsAntNE single crystal was high over a wide range across the visible spectrum. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764062]
引用
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页数:4
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