High-performance dinaphtho-thieno-thiophene single crystal field-effect transistors

被引：132

作者：

Haas, Simon ^{[1
]}

Takahashi, Yukihiro ^{[1
]}

Takimiya, Kazuo ^{[2
,3
]}

Hasegawa, Tatsuo ^{[1
]}

机构：

[1] AIST, Photon Res Inst, Tsukuba, Ibaraki 3058562, Japan

[2] Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

[3] Hiroshima Univ, Inst Adv Mat Res, Higashihiroshima 7398530, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 02期

基金：

日本学术振兴会;

关键词：

electrodes; gold; organic compounds; organic field effect transistors; CHARGE-TRANSPORT; MOBILITY; SURFACE;

D O I：

10.1063/1.3183509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated high-performance single crystal organic field-effect transistors (SC-OFETs) based on dinaphtho[2,3-b:2('),3(')-f]thieno[3,2-b]-thiophene (DNTT). Among various device geometries and contact types, best performance is obtained for a lamination-type SC-OFET composed of a Cytop-treated SiO2 gate dielectric and top-contact gold/tetrathiafulvalene-tetracyanoquinodimethane electrodes, which results in hysteresis-free device characteristics with optimum mobility of 8.3 cm(2)/V s and an on/off ratio of >10(8). The achieved performance is promising for use of the air-stable DNTT in future studies of intrinsic properties of molecular crystals.

引用

页数：3

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