Growth front nucleation of rubrene thin films for high mobility organic transistors

被引:59
作者
Hsu, C. H.
Deng, J.
Staddon, C. R.
Beton, P. H. [1 ]
机构
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Beijing Univ Technol, Sch Appl Math & Phys, Beijing 100022, Peoples R China
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1063/1.2805030
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate a mode of thin film growth in which amorphous islands crystallize into highly oriented platelets. A cascade of crystallization is observed, in which platelets growing outward from a central nucleation point impinge on neighboring amorphous islands and provide a seed for further nucleation. Through control of growth parameters, it is possible to produce high quality thin films which are well suited to the formation of organic transistors. We demonstrate this through the fabrication of rubrene thin film transistors with high carrier mobility.
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页数:3
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