X-ray scattering and diffraction from ion beam induced ripples in crystalline silicon

被引：25

作者：

Biermanns, Andreas ^{[1
]}

Pietsch, Ullrich ^{[1
]}

Grenzer, Joerg ^{[2
]}

Hanisch, Antje ^{[2
]}

Facsko, Stefan ^{[2
]}

Carbone, Geradina ^{[3
]}

Metzger, Till Hartmut ^{[3
]}

机构：

[1] Univ Siegen, D-57068 Siegen, Germany

[2] Forschungszentrum Dresden Rossendorf, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

[3] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 04期

关键词：

D O I：

10.1063/1.2973037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on periodic ripple formation on Si(001) surfaces after bombardment with Xe(+) ions with energies between 5 and 35 keV under incidence angles of 65 degrees and 70 degrees. The sputter process leads to the formation of a rippled amorphous surface layer, followed by a rippled interface toward crystalline material. Using grazing-incidence small-angle scattering and diffraction, we show that the surface morphology is exactly reproduced at the interface. In addition, we observe that the crystal lattice close to the interface is anisotropically expanded. The lattice expansion parallel to the ripples is larger than those perpendicular to them. (C) 2008 American Institute of Physics.

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页数：5

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