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Characterization and growth of high quality ZnTe epilayers by hot-wall epitaxy

被引：24
作者：
Nam, S
Rhee, J
O, BS
Lee, KS
Choi, YD
Jeon, GN
Lee, CH
机构：
[1] CHUNGNAM NATL UNIV,DEPT PHYS,TAEJON 305764,SOUTH KOREA
[2] MOKWON UNIV,DEPT PHYS,TAEJON 301729,SOUTH KOREA
[3] JEONBUK NATL UNIV,DEPT PHYS,JEONJU 561756,SOUTH KOREA
[4] JEONBUK NATL UNIV,SEMICOND PHYS RES CTR,JEONJU 561756,SOUTH KOREA
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 180卷 / 01期
关键词：
hot-wall epitaxy; ZnTe; pre-heating; DCRC; photoluminescence;
D O I：
10.1016/S0022-0248(97)00193-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
ZnTe epilayers of high quality have been grown by hot-wall epitaxy and their characteristics have been investigated. By Rutherford backscattering, the atomic ratio of Zn:Te in the epilayers was found to be almost constant over the wide range of the growth temperature. It was found that the quality of the films depended on the pre-heating temperature. The best Value of the FWHM of the double crystal rocking curve, 93 arcsec, was obtained at the pre-heating temperature of 590-610 degrees C. The PL spectrum with the strong free exciton peaks and no oxygen-bound exciton peaks showed the high quality of the films. From the PL spectrum and the lattice constants, it could be concluded that a tensile strain remained in the ZnTe/GaAs epilayers.
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收藏
页码：47 / 53
页数：7
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