ZNTE/GAAS(001) - GROWTH MODE AND STRAIN EVOLUTION DURING THE EARLY STAGES OF MOLECULAR-BEAM-EPITAXY HETEROEPITAXIAL GROWTH

被引：56

作者：

ETGENS, VH

SAUVAGESIMKIN, M

PINCHAUX, R

MASSIES, J

JEDRECY, N

WALDHAUER, A

TATARENKO, S

JOUNEAU, PH

机构：

[1] CTR UNIV ORSAY,MINIST EDUC NATL & CULTURE,CEA,UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE

[2] LAB MINERAL & CRISTALLOG,F-75252 PARIS,FRANCE

[3] UNIV PARIS 06,F-75230 PARIS 05,FRANCE

[4] LAB PHYS SOLIDE & ENERGIE SOLAIRE,F-06560 VALBONNE,FRANCE

[5] CEA,DRECAM,F-91190 GIF SUR YVETTE,FRANCE

[6] UNIV JOSEPH FOURIER,SEPCTROMETRIE PHYS LAB,GRENOBLE,FRANCE

[7] CEN,DEPT RECH FONDAMENTALE,F-38041 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.47.10607

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The initial stages of molecular-beam-epitaxy heteroepitaxial growth of ZnTe on GaAs(001) substrates are studied by in situ grazing incidence x-ray diffraction performed under ultrahigh vacuum. Pseudomorphic fully strained layers are observed for deposits up to 4 molecular layers (ML), whereas plastic relaxation starts after a critical thickness of about 5 ML together with the onset of a three-dimensional growth mode. Evidence for a normal strain gradient is obtained in partially relaxed layers. The results are confirmed by ex situ high-resolution transmission electron microscopy.

引用

页码：10607 / 10612

页数：6

共 18 条

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