MISFIT EVOLUTION IN THE EARLY STAGES OF THE HETEROEPITAXIAL GROWTH OF GAAS ON SI(001) - AN INSITU X-RAY-SCATTERING STUDY

被引：8

作者：

JEDRECY, N ^{[1
]}

SAUVAGESIMKIN, M ^{[1
]}

PINCHAUX, R ^{[1
]}

MASSIES, J ^{[1
]}

GREISER, N ^{[1
]}

ETGENS, VH ^{[1
]}

机构：

[1] CEA,MEN,CNRS,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 102卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(90)90914-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The first stages of the GaAs/Si (001) heteroepitaxy are studied by grazing incidence X-ray diffraction on layers grown in-situ by molecular beam epitaxy (MBE). The investigated thicknesses range from 5 to 60 Å. The 3D island growth mode has been confirmed for crystalline GaAs nucleated on an As passivated Si(001) surface. A fully coherent interface between GaAs and Si is not observed since a mismatch of 1.55% is already measured after an equivalent deposit of 1.5 molecular layer (ML). On the other hand, complete plastic relaxation leading to the 4% bulk mismatch is not reached after deposition of 20 ML (56 Å) and evidence for a lattice parameter gradient normal to the interface is given. Conversely, a quasi 2D growth mode is inferred in the 5-20 Å thickness range after in-situ crystallization of a thin (1.5 ML) amorphous GaAs prelayer. © 1990.

引用

页码：293 / 302

页数：10

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