2-DIMENSIONAL-LIKE NUCLEATION OF GAAS ON SI BY ROOM-TEMPERATURE DEPOSITION

被引：22

作者：

CASTAGNE, J

FONTAINE, C

BEDEL, E

MUNOZYAGUE, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2372 / 2374

页数：3

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[8] INITIAL GROWTH AND DISLOCATION ACCOMMODATION OF GAAS ON SI(100) BY MOLECULAR-BEAM EPITAXY [J].

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