EFFECTS OF VERY LOW GROWTH-RATES ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES

被引：38

作者：

METZE, GM

CALAWA, AR

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 09期

关键词：

D O I：

10.1063/1.94110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：818 / 820

页数：3

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