Novel results on compensation processes in ZnSe:N

被引：10

作者：

Kurtz, E

Nurnberger, J

Jobst, B

Baumann, H

Kuttler, M

Einfeldt, S

Hommel, D

Landwehr, G

Bethge, K

Bimberg, D

机构：

[1] UNIV FRANKFURT,INST KERNPHYS,D-60486 FRANKFURT,GERMANY

[2] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(96)80024-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Compensation in ZnSe:N was investigated. The total nitrogen concentration in the samples was determined by two different techniques: secondary ion mass spectroscopy and nuclear reaction N-15(p, alpha gamma)C-12 analysis, The net free hole concentration N-A-N-D was correlated with these results. A ratio of (N-A-N-D)/[N] up to 50% was observed. Furthermore, we studied the excitonic region of the photoluminescence of ZnSe:N. Two different transitions correlated with nitrogen complexes could be observed. In lightly doped ZnSe:N a donor like complex was observed, while in highly doped an acceptor like complex dominates. The origin of these complexes is discussed.

引用

页码：289 / 292

页数：4

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