Suppressed boron penetration in p+ polycrystalline-Si/Al2O3/Si metal-oxide-semiconductor structures

被引：11

作者：

Cho, HJ ^{[1
]}

Park, DG ^{[1
]}

Lim, KY ^{[1
]}

Ko, JK ^{[1
]}

Yeo, IS ^{[1
]}

Park, JW ^{[1
]}

Roh, JS ^{[1
]}

机构：

[1] Hynix Semicond Inc, Memory Res & Dev Div, Inchon 467701, Kyoungki Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 17期

关键词：

D O I：

10.1063/1.1474603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a suppressed boron penetration in p(+) polycrystalline-Si (poly-Si)/Al2O3/n-Si metal-oxide-semiconductor (MOS) capacitors using a remote plasma nitridation (RPN) of Al2O3 surface. The B penetration was sufficiently suppressed for temperature to 850 degreesC in N-2 for 30 min as manifested by the negligible flat band shift (DeltaV(FB)) and insignificant B diffusion. The nitrogen (N) incorporation in Al2O3 surface appears to effectively impede the B diffusion into the Si channel. Increased gate leakage current for the n+ poly-Si/RPN-Al2O3/p-Si n-type MOS capacitors was observed and attributed to the reduced band gap energy of RPN-Al2O3 due to the formation of AlN and bulk defects due to RPN. Optimization of N concentration is required for the suppressed B penetration and leakage reduction. (C) 2002 American Institute of Physics.

引用

页码：3177 / 3179

页数：3

共 16 条

[1] Nitrogen concentration dependence on boron diffusion in thin silicon oxynitrides used for metal-oxide-semiconductor devices [J].

Aoyama, T ;

Suzuki, K ;

Tashiro, H ;

Tada, Y ;

Horiuchi, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (02) :689-693

[2] 80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications [J].

Buchanan, DA ;

Gusev, EP ;

Cartier, E ;

Okorn-Schmidt, H ;

Rim, K ;

Gribelyuk, MA ;

Mocuta, A ;

Ajmera, A ;

Copel, M ;

Guha, S ;

Bojarczuk, N ;

Callegari, A ;

D'Emic, C ;

Kozlowski, P ;

Chan, K ;

Fleming, RJ ;

Jamison, PC ;

Brown, J ;

Arndt, R .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :223-226

[3] High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10Å [J].

Chin, A ;

Wu, YH ;

Chen, SB ;

Liao, CC ;

Chen, WJ .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :16-17

[4] Physical models of boron diffusion in ultrathin gate oxides [J].

Fair, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (02) :708-717

[5] High-resolution depth profiling in ultrathin Al2O3 films on Si [J].

Gusev, EP ;

Copel, M ;

Cartier, E ;

Baumvol, IJR ;

Krug, C ;

Gribelyuk, MA .

APPLIED PHYSICS LETTERS, 2000, 76 (02) :176-178

[6] Thermodynamic stability of binary oxides in contact with silicon [J].

Hubbard, KJ ;

Schlom, DG .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) :2757-2776

[7]

ITOKAWA H, 1999, SSDM, P158

[8] Effect of polysilicon gate on the flatband voltage shift and mobility degradation for ALD-Al2O3 gate dielectric [J].

Lee, JH ;

Koh, K ;

Lee, NI ;

Cho, MH ;

Kim, YK ;

Jeon, JS ;

Cho, KH ;

Shin, HS ;

Kim, MH ;

Fujihara, K ;

Kang, HK ;

Moon, JT .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :645-648

[9]

MANCHANDA L, 1999, SSDM TOK JAP SEPT 21, P150

[10] Dopant penetration effects on polysilicon gate HfO2 MOSFET's [J].

Onishi, K ;

Kang, L ;

Choi, R ;

Dharmarajan, E ;

Gopalan, S ;

Jeon, Y ;

Kang, CS ;

Lee, BH ;

Nieh, R ;

Lee, JC .

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :131-132

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