Spin relaxation in asymmetrical heterostructures

被引：33

作者：

Averkiev, NS ^{[1
]}

Golub, LE

Willander, M

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden

[3] Gothenburg Univ, S-41296 Gothenburg, Sweden

来源：

SEMICONDUCTORS | 2002年 / 36卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1434520

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron spin relaxation by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical III-V heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and triangular quantum wells. The calculations show a several-orders-of-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：91 / 97

页数：7

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