Interplay of electron-electron and electron-phonon interactions in the low-temperature phase of 1T-TaS2

被引:62
作者
Cho, Doohee [1 ]
Cho, Yong-Heum [2 ,3 ]
Cheong, Sang-Wook [3 ,4 ,5 ]
Kim, Ki-Seok [2 ]
Yeom, Han Woong [1 ,2 ]
机构
[1] Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 790784, South Korea
[3] Pohang Univ Sci & Technol, Lab Pohang Emergent Mat, Pohang 790784, South Korea
[4] Rutgers State Univ, Rutgers Ctr Emergent Mat, Piscataway, NJ 08854 USA
[5] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
关键词
SCANNING TUNNELING SPECTROSCOPY; CHARGE-DENSITY WAVES; STATE; TRANSITION; GAP;
D O I
10.1103/PhysRevB.92.085132
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the interplay of the electron-electron and electron-phonon interactions in the electronic structure of an exotic insulating state in the layered dichalcogenide 1T-TaS2, where the charge-density-wave (CDW) order coexists with a Mott correlation gap. Scanning tunneling microscopy and spectroscopy measurements with high spatial and energy resolution determine unambiguously the CDW and the Mott gap as 0.20-0.24 eV and 0.32 eV, respectively, through the real space electron phases measured across the multiply formed energy gaps. An unusual local reduction of the Mott gap is observed on the defect site, which indicates the renormalization of the on-site Coulomb interaction by the electron-phonon coupling as predicted by the Hubbard-Holstein model. The Mott-gap renormalization provides insight into the disorder-induced quasimetallic phases of 1T-TaS2.
引用
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页数:5
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