Direct evidence of the charge ordered phase transition of indium nanowires on Si(111)

被引:95
作者
Park, SJ [1 ]
Yeom, HW [1 ]
Min, SH [1 ]
Park, DH [1 ]
Lyo, IW [1 ]
机构
[1] Yonsei Univ, Ctr Atom Wires & Layers, Seoul 120749, South Korea
关键词
D O I
10.1103/PhysRevLett.93.106402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A controversial issue of the driving force for the phase transition of the one-dimensional (1D) metallic In wires on Si(111) is studied by low-temperature scanning tunneling microscopy and spectroscopy. The energy gap opening and the longitudinal charge ordering through charge transfer at the Fermi level are unambiguously observed. The vacancy defects induce a local charge ordering decoupled from a lattice distortion above T-c, and pin the phase of charge order below T-c. All these results below and above T-c including the detailed features such as local fluctuations strongly support the 1D charge-density-wave mechanism for the phase transition.
引用
收藏
页码:106402 / 1
页数:4
相关论文
共 23 条
[1]   SURFACE ELECTRONIC-STRUCTURE OF A SINGLE-DOMAIN SI(111)4X1-IN SURFACE - A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J].
ABUKAWA, T ;
SASAKI, M ;
HISAMATSU, F ;
GOTO, T ;
KINOSHITA, T ;
KAKIZAKI, A ;
KONO, S .
SURFACE SCIENCE, 1995, 325 (1-2) :33-44
[2]   Luttinger-liquid behaviour in carbon nanotubes [J].
Bockrath, M ;
Cobden, DH ;
Lu, J ;
Rinzler, AG ;
Smalley, RE ;
Balents, L ;
McEuen, PL .
NATURE, 1999, 397 (6720) :598-601
[3]   Structure determination of the indium-induced Si(111)-(4 x 1) reconstruction by surface x-ray diffraction [J].
Bunk, O ;
Falkenberg, G ;
Zeysing, JH ;
Lottermoser, L ;
Johnson, RL ;
Nielsen, M ;
Berg-Rasmussen, F ;
Baker, J ;
Feidenhans'l, R .
PHYSICAL REVIEW B, 1999, 59 (19) :12228-12231
[4]   Weakly correlated one-dimensional indium chains on Si(111) [J].
Cho, JH ;
Oh, DH ;
Kim, KS ;
Kleinman, L .
PHYSICAL REVIEW B, 2001, 64 (23)
[5]  
Gallus O, 2001, EUR PHYS J B, V20, P313
[6]  
Gruner G., 1994, Density waves in solids
[7]   Jahn-Teller distortion in dangling-bond linear chains fabricated on a hydrogen-terminated Si(100)-2 x 1 surface [J].
Hitosugi, T ;
Heike, S ;
Onogi, T ;
Hashizume, T ;
Watanabe, S ;
Li, ZQ ;
Ohno, K ;
Kawazoe, Y ;
Hasegawa, T ;
Kitazawa, K .
PHYSICAL REVIEW LETTERS, 1999, 82 (20) :4034-4037
[8]   Low-temperature structure of indium quantum chains on silicon [J].
Kumpf, C ;
Bunk, O ;
Zeysing, JH ;
Su, Y ;
Nielsen, M ;
Johnson, RL ;
Feidenhans'l, R ;
Bechgaard, K .
PHYSICAL REVIEW LETTERS, 2000, 85 (23) :4916-4919
[9]   Absolute In coverage and bias-dependent STM images of the Si(111)4x1-In surface [J].
Lee, G ;
Yu, SY ;
Kim, H ;
Koo, JY ;
Lee, HI ;
Moon, DW .
PHYSICAL REVIEW B, 2003, 67 (03)
[10]   Charge-density-wave STM observation in η-Mo4O11 -: art. no. 165428 [J].
Mallet, P ;
Guyot, H ;
Veuillen, JY ;
Motta, N .
PHYSICAL REVIEW B, 2001, 63 (16)