Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM)

被引：19

作者：

Han, Jin-Woo ^{[1
]}

Ryu, Seong-Wan ^{[1
]}

Choi, Sung-Jin ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 02期

关键词：

Disturbance; FinFET; gate-induced drain leakage (GIDL); nonvolatile memory (NVM); soft program; SONOS; unified RAM (URAM); 1T-DRAM; NONVOLATILE MEMORY DEVICES; CAPACITORLESS; 1T-DRAM; FINFET;

D O I：

10.1109/LED.2008.2010345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A soft-programming-free operation method in unified RAM (URAM) is presented. An oxide/nitride/oxide (O/N/O) layer and a floating-body are integrated in a FinFET, thereby providing the versatile functions of a high-speed capacitorless 1T-DRAM, as well as nonvolatile memory, and the mode of the memory cell can be selected and independently utilized according to the designer's demand. With the utilization of the impact ionization method for IT-DRAM programming, undesired soft charge trapping into O/N/O gradually shifts the threshold voltage, resulting in an unstable operation in the URAM. In order to avoid such problems associated with soft programming, a gate-induced drain-leakage (GIDL) program method is proposed for improved immunity to disturbance. It is found that the GIDL method effectively suppresses soft programming without sacrificing the sensing current window.

引用

页码：189 / 191

页数：3

共 7 条

[1] VARIOT: A novel multilayer tunnel barrier concept, for low-voltage nonvolatile memory devices [J].