Adsorption and decomposition of C-60 molecules on Si(111) surfaces

被引:10
作者
Chen, D
Workman, RK
Sarid, D
机构
[1] Optical Sciences Center, University of Arizona, Tucson
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期
关键词
D O I
10.1116/1.589188
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Adsorption of C-60 molecules on Si(lll)-(7x7) has been studied using scanning tunneling microscopy under ultrahigh vacuum conditions at a variety of temperatures and coverages. At submonolayer coverages, isolated C-60 molecules were found to adsorb preferentially in the areas near the three midadatoms within a half unit cell of (7x7) symmetry. At monolayer coverage, the adsorbate-adsorbate interaction changes the molecular bonding sites and causes the local ordering of the C-60 adlayer. Thermal annealing to temperatures above 800 degrees C causes the decomposition of C-60 molecules on the Si surface and the formation of SIC clusters. (C) 1996 American Vacuum Society.
引用
收藏
页码:979 / 981
页数:3
相关论文
共 16 条
[11]   SOLID C-60 - A NEW FORM OF CARBON [J].
KRATSCHMER, W ;
LAMB, LD ;
FOSTIROPOULOS, K ;
HUFFMAN, DR .
NATURE, 1990, 347 (6291) :354-358
[12]  
Kroto H.W., 1993, The Fullerenes
[13]   ADSORPTION OF INDIVIDUAL C-60 MOLECULES ON SI(111) [J].
LI, YZ ;
CHANDER, M ;
PATRIN, JC ;
WEAVER, JH ;
CHIBANTE, LPF ;
SMALLEY, RE .
PHYSICAL REVIEW B, 1992, 45 (23) :13837-13840
[14]   INFRARED PROPERTIES OF HEXAGONAL SILICON CARBIDE [J].
SPITZER, WG ;
KLEINMAN, D ;
WALSH, D .
PHYSICAL REVIEW, 1959, 113 (01) :127-132
[15]   SCANNING TUNNELING MICROSCOPY OF C-60 ON THE SI(111)7X7 SURFACE [J].
WANG, XD ;
HASHIZUME, T ;
SHINOHARA, H ;
SAITO, Y ;
NISHINA, Y ;
SAKURAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (7B) :L983-L986
[16]   Solid state properties of fullerenes and fullerene-based materials [J].
Weaver, JH ;
Poirier, DM .
SOLID STATE PHYSICS - ADVANCES IN RESEARCH AND APPLICATIONS, VOL 48, 1994, 48 :1-108