Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

被引:590
作者
Kim, Dae-Hyeong [10 ,11 ,12 ]
Song, Jizhou [7 ]
Choi, Won Mook [6 ]
Kim, Hoon-Sik [10 ,11 ,12 ]
Kim, Rak-Hwan [10 ,11 ,12 ]
Liu, Zhuangjian [5 ]
Huang, Yonggang Y. [1 ,2 ]
Hwang, Keh-Chih [3 ]
Zhang, Yong-wei [4 ,5 ]
Rogers, John A. [8 ,9 ,10 ,11 ,12 ]
机构
[1] Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA
[3] Tsinghua Univ, Dept Engn Mech, Beijing 100084, Peoples R China
[4] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore
[5] Inst High Performance Comp, Singapore 138632, Singapore
[6] Samsung Adv Inst Technol, Yongin 449712, Gyeonggi Do, South Korea
[7] Univ Miami, Dept Mech & Aerosp Engn, Coral Gables, FL 33146 USA
[8] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[9] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[10] Univ Illinois, Beckman Inst, Dept Mat Sci, Urbana, IL 61801 USA
[11] Univ Illinois, Beckman Inst, Dept Engn, Urbana, IL 61801 USA
[12] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
flexible electronics; stretchable electronics; semiconductor nanomaterials; plastic electronics; buckling mechanics;
D O I
10.1073/pnas.0807476105
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90 degrees in approximate to 1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to approximate to 140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.
引用
收藏
页码:18675 / 18680
页数:6
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