Space-charge-limited currents in nonstoichiometric GaAs

被引：22

作者：

Ibbetson, JP ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,COLL ENGN,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 26期

关键词：

D O I：

10.1063/1.116615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of space-charge-limited transport in nonstoichiometric (NS) GaAs is presented. The NS-GaAs was grown at 250 degrees C by molecular beam epitaxy and subsequently annealed at 700 degrees C so that the room-temperature low-field conductivity is due almost entirely to electrons thermally excited to the conduction band from deep traps. Experimental current-voltage characteristics of an n(+) GaAs/NS-GaAs homojunction structure display an unusual current saturation whose onset occurs at an electric field of similar to 5 kV/cm. We argue that this behavior is due to a combination of electron velocity saturation and the high concentration of compensated traps in annealed NS-GaAs. (C) 1996 American Institute of Physics.

引用

页码：3781 / 3783

页数：3

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