Island growth kinetics during vapor deposition of Cu onto the Zn-terminated ZnO(0001) surface

被引:45
作者
Yoshihara, J
Parker, SC
Campbell, CT [1 ]
机构
[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA
[2] Univ Washington, Dept Phys, Seattle, WA 98195 USA
关键词
copper; growth; low energy ion scattering (LEIS); models of surface kinetics; nucleation; surface diffusion; X-ray photoelectron spectroscopy (XPS); zinc oxide;
D O I
10.1016/S0039-6028(99)00752-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
During the vapor deposition of Cu onto the Zn-terminated ZnO(0001) surface, it has previously been observed that at room temperature and below, the Cu grows first as two-dimensional islands up to a certain critical coverage (theta(1,cr)) near 0.3 monolayers. As the Cu coverage increases above theta(1,cr), these islands thicken into three-dimensional particles but the clean ZnO spaces between the Cu particles fill only very slowly. This occurs due to a kinetic limitation, since the islands thermodynamically prefer to be thicker and larger. Here, the dependencies of the critical coverage upon the substrate temperature and Cu vapor flux are measured. No significant change in critical coverage is seen when the flux is varied by similar to 30-fold, but it decreases weakly with temperature. These trends are discussed within a kinetic model which incorporates the various Cu adatom migration and island nucleation steps. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:153 / 162
页数:10
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