400-mW single-frequency 660-nm semiconductor laser

被引：23

作者：

Pezeshki, B ^{[1
]}

Hagberg, M ^{[1
]}

Zelinski, M ^{[1
]}

DeMars, SD ^{[1
]}

Kolev, E ^{[1
]}

Lang, RJ ^{[1
]}

机构：

[1] SDL Inc, San Jose, CA 95134 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 07期

关键词：

distributed-feedback lasers; laser modes; quantum-well lasers; semiconductor lasers; semiconductor waveguides;

D O I：

10.1109/68.769709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using an angled-grating broad-area structure in GaInP-AlInP material system, we obtain single spatial and longitudinal-mode operation at 660 nm, The grating stabilizes the mode to deliver over 400-mW continuous-wave at room temperature from a 60-mu m-wide stripe. This is about ten times higher than conventional distributed-feedback power output levels, and is the highest single-frequency power from a monolithic semiconductor de,ice in this wavelength range. These devices should be useful for single-mode-fiber coupling and in applications where high-wavelength stability is required, such as spectroscopy, interferometry, or metrology.

引用

页码：791 / 793

页数：3

共 7 条

[1] 660NM WAVELENGTH GAINASP ALGAAS DISTRIBUTED FEEDBACK LASERS [J].