Electron spin resonance of ultrafine Si particles

被引：1

作者：

Dohi, M ^{[1
]}

Yamatani, H ^{[1
]}

Fujita, T ^{[1
]}

机构：

[1] Shizuoka Inst Sci & Technol, Dept Elect Engn, Shizuoka 4378555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 3A期

关键词：

new defect; EX center; ESR; silicon; ultrafine particle;

D O I：

10.1143/JJAP.38.1300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A previously reported EX center is a new defect observed in thermal SiO2 layer on Si. The detailed characteristics of this defect have not been clarified yet. The present work reports on the creation, the activation and the passivation of the EX center by thermal treatment in ultrafine Si particles. The electron spin resonance signal of the EX centers was emphasized by annealing in vacuum and reduced by annealing in oxygen. The intensity of the EX signal varied reversibly with the pressure of ambient oxygen.

引用

页码：1300 / 1302

页数：3

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