ELECTRON-SPIN RESONANCE OF INHERENT AND PROCESS INDUCED DEFECTS NEAR THE SI/SIO2 INTERFACE OF OXIDIZED SILICON-WAFERS

被引：47

作者：

POINDEXTER, EH

CAPLAN, PJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575701

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1352 / 1357

页数：6

共 29 条

[1] ELECTRON-PARAMAGNETIC-RES OF DEFECTS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION .1. O+ IMPLANTATION
BARKLIE, RC
HOBBS, A
HEMMENT, PLF
REESON, K
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (32): : 6417 - 6432
[2] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE
BROWER, KL
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113
[3] ELECTRON-SPIN-RESONANCE STUDIES OF THERMALLY OXIDIZED SILICON-WAFERS
BRUNSTROM, C
SVENSSON, C
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 399 - 404
[4] Caplan P. J., 1987, Science and Technology of Microfabrication Symposium, P241
[5] CAPLAN PJ, 1987, B AM PHYS SOC, V32, P804
[6] PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES IN SILICON-ON-INSULATOR FILMS
CARLOS, WE
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (20) : 1450 - 1452
[7] RADIATION EFFECTS OF E-BEAM FABRICATED SUB-MICRON NMOS TRANSISTORS
CHEN, JY
HENDERSON, RC
PATTERSON, DO
MARTIN, R
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (01): : 13 - 15
[8] CHUNG MF, 1970, SURF SCI, V19, P45
[9] DAVIS RJ, 1984, THIN FILMS INTERFACE, P604
[10] Edwards A., COMMUNICATION