RADIATION EFFECTS OF E-BEAM FABRICATED SUB-MICRON NMOS TRANSISTORS

被引：16

作者：

CHEN, JY

HENDERSON, RC

PATTERSON, DO

MARTIN, R

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] USN ACAD,ANNAPOLIS,MD 21402

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 01期

关键词：

D O I：

10.1109/EDL.1982.25457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：13 / 15

页数：3

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