CO-60 RADIATION EFFECTS ON DRY HIGH-PRESSURE OXIDES

被引：4

作者：

GUPTA, A

PANCHOLY, RK

SPERO, J

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/TNS.1980.4331100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1749 / 1752

页数：4

共 8 条

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[3]

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[5] RADIATION-HARDENED SILICON-GATE CMOS-SOS [J].

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[6] INVESTIGATION OF RADIATION EFFECTS AND HARDENING PROCEDURES FOR CMOS-SOS [J].

PEEL, JL ;

PANCHOLY, RK ;

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[7]

TSUBOUCHI N, 1974, IEEE T ELECTRON DEVI, V26, P618

[8]

ZETO RJ, 1979, SOLID STATE TECHNOL, V22, P62

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