Epitaxial nanotwinned Cu films with high strength and high conductivity

被引：212

作者：

Anderoglu, O. ^{[1
]}

Misra, A. ^{[2
]}

Wang, H. ^{[3
]}

Ronning, F. ^{[2
]}

Hundley, M. F. ^{[2
]}

Zhang, X. ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Mech Engn, College Stn, TX 77843 USA

[2] Los Alamos Natl Lab, Mat Phys & Applicat Div, Los Alamos, NM 87545 USA

[3] Texas A&M Univ, Dept Elect Engn, College Stn, TX 77843 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2969409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the synthesis of epitaxial (single-crystal-like), nanotwinned Cu films via magnetron sputtering. Increasing the deposition rate from 1 to 4 nm/s decreased the average twin lamellae spacing from 16 to 7 nm. These epitaxial nanotwinned Cu films exhibit significantly higher ratio of hardness to room temperature electrical resistivity than columnar grain (nanocrystalline), textured, nanotwinned Cu films. (C) 2008 American Institute of Physics.

引用

页数：3

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