High-temperature microwave characteristics of GaAs MESFET devices with AlAs buffer layers

被引：9

作者：

Ito, C ^{[1
]}

Jenkins, T ^{[1
]}

Trombley, G ^{[1
]}

Lee, R ^{[1
]}

Reston, R ^{[1
]}

Havasy, C ^{[1
]}

Johnson, B ^{[1
]}

Eppers, C ^{[1
]}

机构：

[1] USAF,WRIGHT LAB,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 01期

关键词：

D O I：

10.1109/55.475563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlAs buffers used to reduce the leakage current of high-temperature GaAs MESFET devices are shown to have no detrimental effect on the microwave performance measured to 200 degrees C. The f(t) values decrease with increasing temperature, but do not appear to be influenced by the AlAs buffer. The f(max) values also decrease with increasing temperature; however, they are improved with increasing AlAs buffer thickness due to a concomitant decrease in the device output conductance. At 200 degrees C ambient temperature, f(t) and f(max) values of 14.5 GHz and 36.7 GHz, respectively, were measured.

引用

页码：16 / 18

页数：3

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