Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

被引：618

作者：

Tsai, Dung-Sheng ^{[1
,2
]}

Liu, Keng-Ku ^{[3
]}

Lien, Der-Hsien ^{[1
,2
]}

Tsai, Meng-Lin ^{[1
,2
]}

Kang, Chen-Fang ^{[1
,2
]}

Lin, Chin-An ^{[1
,2
]}

Li, Lain-Jong ^{[3
,4
]}

He, Jr-Hau ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

来源：

ACS NANO | 2013年 / 7卷 / 05期

关键词：

graphene; MoS2; photodetector; high-temperature detection; harsh environment; SEMICONDUCTOR-METAL PHOTODETECTORS; HIGH-TEMPERATURE; ZNO NANOWIRE; THIN-LAYERS; LARGE-AREA; ENHANCEMENT; DESIGN; FILMS;

D O I：

10.1021/nn305301b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use In harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to similar to 10(10) cm Hz(1/2)/W), fast photoresponse (rise time of similar to 70 mu s and fall time of similar to 110 mu s), and high thermal stability (at a working temperature of up to 200 degrees C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (similar to 10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.

引用

页码：3905 / 3911

页数：7

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