Epitaxial growth of AlN thin films on sapphire by pulsed laser deposition and effect of N2 ambient on crystallinity

被引：16

作者：

Okamoto, M ^{[1
]}

Mori, Y ^{[1
]}

Sasaki, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 565, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4A期

关键词：

aluminum nitride (AlN); wide band gap semiconductor; pulsed laser deposition (PLD); X-ray diffraction (XRD);

D O I：

10.1143/JJAP.38.2114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality epitaxial AlN films were grown on (0001) sapphire substrates using pulsed laser deposition from sintered AIN targets in a nitrogen ambient. The X-ray rocking curves of the AlN(0002) peak became narrower with decreasing ambient pressure and yielded a full-width ar half maximum of 0.078 degrees. The N/Al composition ratio increases with N-2 pressure. The Al/N composition ratio can be varied by changing the ambient N-2 pressure.

引用

页码：2114 / 2115

页数：2

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