LOW-TEMPERATURE GROWTH AND MEASUREMENT OF OXYGEN IN REACTIVELY SPUTTERED ALN THIN-FILMS

被引：34

作者：

KUMAR, S ^{[1
]}

TANSLEY, TL ^{[1
]}

机构：

[1] MACQUARIE UNIV,DEPT PHYS,SEMICOND SCI & TECHNOL LABS,SYDNEY,NSW 2109,AUSTRALIA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8A期

关键词：

ALN THIN FILMS; REACTIVE SPUTTERING; XPS; RES; CROSS-SECTIONAL SEM;

D O I：

10.1143/JJAP.34.4154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminium nitride (AlN) thin films have been grown on a variety of substrates using low-temperature radio frequency reactive sputtering of aluminium in pure nitrogen plasma. Quantitative analyses of the film composition, carried out using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS), suggest the resulting films to be near stoichiometric with high amounts of oxygen present in them, The high concentration of oxygen in our films is attributed to the voided microstructure as revealed by cross-sectional scanning electron microscopy.

引用

页码：4154 / 4158

页数：5

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