Growth and crystallinity of ferroelectric BaMgF4 films on (111)-oriented Pt films

被引：5

作者：

Aizawa, K

Moriwaki, M

Ichiki, T

Tokumitsu, E

Ishiwara, H

机构：

[1] Prec. and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 226

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 2B期

关键词：

ferroelectric; BaMgF4; epitaxial growth; Pt(111)/SiO2/Si(100); MFMIS structure;

D O I：

10.1143/JJAP.36.L234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of well (Ill)-oriented Pt films on SiO2/Si(100) substrates and the crystallinity of BaMgF4 films grown on the Pt(111)/SiO2/Si(100) substrates have been investigated. It was found by X-ray diffraction analysis that well (111)-oriented Pt films with a best full-width at half maximum (FWHM) of 0.92 degrees were grown by the radio frequency (RF) magnetron sputtering method. It was also found that (120)-oriented BaMgF4 films were grown on Pt(111)/SiO2/Si(100) substrates at temperatures of about 550 degrees C and that the crystallinity of these BaMgF4 films improved as the FWHM of the Pt(lll) diffraction peak decreased. The best FWHM obtained for a BaMgF4 film grown on a Pt(111)/SiO2/Si(100) substrate was 0.97 degrees, and crystallites in the BaMgF4 films grown on Pt(lll)/SiO2/Si(100) substrates were larger (about 0.4 mu m(2)) than those in-the BaMgF4 films grown on Si(111) substrates.

引用

页码：L234 / L237

页数：4

共 7 条

[1] Ferroelectric properties of BaMgF4 films grown on Si(100), (111), and Pt(111)/SiO2/Si(100) structures [J].